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last update: 2015.5.14

赤井 大輔(あかい だいすけ)

肖像
所属:
豊橋技術科学大学 ベンチャー・ビジネス・ラボラトリー 助教
住所:
〒441-8580 愛知県豊橋市天伯町雲雀ヶ丘1-1
Tel:
0532-44-6974 (dial-in)
Fax/Tel:
0532-44-6979 (VBL office)
E-mail:
akai#@#vbl.tut.ac.jp (remove "#")
ResearcherID:
A-5951-2012

略歴

研究テーマ

機能性材料とシリコン集積回路技術との融合を目指し研究を行っています。

  1. シリコン基板上への絶縁性結晶薄膜の成長
  2. 知能性基板を用いた強誘電体薄膜スマートセンサ

論文

  1. Daisuke Takashima, Katsuya Ozaki, Masato Nishimura, Nagaya Okada, Daisuke Akai, and Makoto Ishida, "Vibration Analysis and Evaluation of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr, Ti)O3 Thin Film", Sensors and Maerials, Vol. 27 (2015) 1-10. (Coresponding Author)
  2. D Akai, R Yoshita and M Ishida, "(Na, Bi)TiO3 based lead-free ferroelectric thin films on Si substrate for pyroelectric infrared sensors", J. Phys.: Conf. Ser., Vol. 433 (2013) 012017.
  3. Daisuke Akai, Katsuya Ozaki, Yasuyuki Numata, Keisuke Suzuki, Nagaya Okada, and Makoto Ishida, "Vibration Analysis and Transmission Characteristics of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O3 Thin Films on γ-Al2O3/Si Substrate", Japanese Journal of Applied Physics, Vol. 51 (2012) 11PA04 (4 pages).
  4. Daisuke Akai, Yasuhiro Oba, Nagaya Okada, Mikinori Ito, Kazuaki Sawada, Hidekuni Takao and Makoto Ishida, “Fabrication of Ultrasonic Transducers using Epitaxial Pb(Zr,Ti)O3 Thin Films on Epitaxial γ-Al2O3/Si Substrates for Smart Sensors”, Sensors and Materials, Vol. 18, No. 3 (2006) 161-169.
  5. Daisuke Akai, Keisuke Hirabayashi, Mikako Yokawa, Kazuaki Sawada, Yoshiharu Taniguchi, Shinnichi Murashige, Naoto Nakayama, Tetsuya Yamada, Kensuke Murakami and Makoto Ishida, “Pyroelectric Infrared Sensors with Fast Response Time and High Sensitivity using Epitaxial Pb(Zr,Ti)O3 Films on Epitaxial γ-Al2O3/Si Substrates”, Sensors and Actuators: A, Vols. 130-131 (2006) 111-115.
  6. D. Akai, M. Yokawa, K. Hirabayashi, K. Matasushita, K. Sawada and M. Ishida, “Ferroelectric properties of sol-gel delivered epitaxial Pb(Zrx,Ti1-x)O3 thin films on Si using epitaxial γ-Al2O3 Layers,” Applied Physics Letters, Vol. 86, No. 20 (2005) 202906.
  7. D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada and M. Ishida, "Epitaxial Growth of Pt(001) Thin Films on Si Substrates using an Epitaxial γ-Al2O3(001) Buffer Layer", Journal of Crystal Growth, Vol.264, No. 1-3 (2004) 463-467.
  8. D. Akai, K. Sawada and M. Ishida, "Fabrication of Pb(Zr,Ti)O3 Films on Epitaxial γ-Al2O3(001)/Si(001) Substrates", Journal of Crystal Growth, Vol.259, No. 1-2 (2003) 90-94.

(共著)

  1. Koji Oishi, Shota Yonemaru, Daisuke Akai and Makoto Ishida, "SiO2/SiN Multilayer-Stack Infrared Absorber Integrated on Pb(Zr0.4,Ti0.6)O3 Film Pyroelectric Sensors on γ-Al2O3/Si Substrate", Sensors and Materials, Vol. 27 (2015) 217-227.
  2. M. A. Matin, K. Oishi, A. Katsuta, D. Akai, K. Sawada, M. Ishida, "Aspects of Integrating Functional Electroceramic Material in Multilayer Thin Films for Image Sensing: Modeling and Experiment", Journal of Electronic Materials, to be published, DOI:10.1007/s11664-015-3631-x.
  3. K. Oishi, D. Akai, and M. Ishida, "Integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor circuits on Si(100) substrate", Solid-State Electronics, Vol. 103 (2015) 110-114.
  4. K. Ozaki, M. A. Matin, Y. Numata, D. Akai, K. Sawada, and M. Ishida, "Fabrication and characterization of a smart epitaxial piezoelectric micromachined ultrasonic transducer", Materials Science and Engineering: B, Vol. 190 (2014) 41-46.
  5. M. A. Matin, D. Akai, K. Ozaki, N. Kawazu, M. Hanebuchi, K. Sawada and M. Ishid, "Correlation between residual stresses and bending in functional electroceramic-based MEMS actuator", Computational Materials Science, Vol. 85 (2014) 253-258.
  6. M. A. Matin, D. Akai, K. Ozaki, N. Kawazu, M. Hanebuchi, K. Sawada and M. Ishid, "Dynamic behavior of a new surface-micromachined piezoelectric material actuated micro-mirror device", Computational Materials Science, Vol. 50, No. 8 (2011), 2311-2318.
  7. M. A. Matin, D. Akai, N. Kawazu, M. Hanebuchi, K. Sawada and M. Ishida, "FE modeling of stress and deflection of PZT actuated micro-mirror: Effect of crystal anisotropy", Computational Materials Science, Vol. 48, No. 2 (2010), 349-359.
  8. M. A. Matin, D. Akai, N. Kawazu, M. Hanebuchi, K. Sawada and M. Ishida, "Characterization of the deflection of a new epitaxial piezoelectric micro-mirror: Modeling and experiment", Materials Science and Engineering: B, Vol. 175, No. 2 (2010), 129-135.
  9. Yiping Guo, Min Li, Wen Zhao, Daisuke Akai, Kzauaki Sawada, Makoto Ishida and Mingyuan Gu,"Ferroelectric and pyroelectric properties of (Na0.5Bi0.5)TiO3-BaTiO3 based trilayered thin films ", Thin Solid Films, Vol. 517 (2009) 2974-2978.
  10. Yiping Guo, Daisuke Akai, Kzauaki Sawada, Makoto Ishida and Mingyuan Gu, "Structure and electrical properties of trilayered BaTiO3/(Na0.5Bi0.5)TiO3-BaTiO3/BaTiO3 thin films deposited on Si substrate", Solid State Communications, Vol. 149 (2009) 14-17.
  11. Yiping Guo, Daisuke Akai, Kazuaki Sawada, Makoto Ishida and Mingyuan Gu, "Dielectric and tunable properties of highly (110)-oriented (Ba0.65Sr0.35)TiO3 thin films deposited on Pt/LaNiO3/SiO2/Si substrates", Journal of Sol-Gel Science and Technology, Vol. 49, No. 1 (2009) 66-70.
  12. M. Ito, N. Okada, M. Takabe, M. Otonari, D. Akai, K. Sawada and M. Ishida, "High sensitivity ultrasonic sensor for hydrophone applications, using an epitaxial PZT film grown on SrRuO3/Pt/γ-Al2O3/Si", Sensors and Actuators: A, Vol. 145-146 (2008) 278-282.
  13. Yiping Guo, Daisuke Akai, Kazauki Sawada, Makoto Ishida, "Dielectric and ferroelectric properties of highly (100)-oriented (Na0.5Bi0.5)0.94Ba0.06TiO3 thin films grown on LaNiO3/γ-Al2O3/Si substrates by chemical solution deposition", Solid State Science, Vol. 10, No. 7 (2008) 928-933.
  14. Yiping Guo, Daisuke Akai, Kazuaki Sawada, Makoto Ishida, "The performance of Pt bottom electrode and PZT films deposited on Al2O3 /Si substrate by using LaNiO3 film as an adhesion layer", Solid State Communications, Volume 145, Issues 7-8 (2008) 413-417.
  15. Mikinori Ito, Daisuke Masunaga, Daisuke Akai, Kazuaki Sawada, Makoto Ishida, "Comparison of the growth behavior of γ-Al2O3 thin films grown on Si (1 1 1) by molecular beam epitaxy using N2O and O2", Journal of Crystal Growth, Vol. 310, No. 2 (2008) 372-377.
  16. Yiping Guo, Daisuke Akai, Kzauaki Swada, and Makoto Ishida, "Ferroelectric and pyroelectric properties of highly (110)-oriented Pb(Zr0.40Ti0.60)O3 thin films grown on Pt/LaNiO3/SiO2/Si substrates", Applied Physics Letters, Vol. 90, No. 23 (2007) 232908.
  17. M. Ishida, H. Hori, F. Kondo, D. Akai and K. Sawada, "Fabrication of the Si/Al2O3/SiO2/Si structure using the O2 annealed Al2O3/SiO2 structure", Japanese Journal of Applied Physics, Vol. 39, Part 1, No. 4B (2000) 2078-2082.

学会・研究会発表

国際会議

  1. D. Akai, M. Nishimura, N. Okada, M. Ishida, "Ultrasonic Beam Formation by pMUTs array using Epitaxial PZT Thin Films on γ-Al2O3/Si Substrates", 2014 IEEE Int'l Ultrasonics Symposium, P5C1-14, September 2014, Chicago, IL, USA.
  2. D. Akai, "Si Integrated Ferroelectric MEMS Sensors using Epitaxial PZT Thin Films on γ-Al2O3/Si Substrates", 6th IEEE Int’l Nanoelectronics Conf. 2014 (INEC2014), MN-5001, July 2014, Sapporo, Japan. (INVITED)
  3. Daisuke Akai, Ryoto Yoshita, and Makoto Ishida, "(Na,Bi)TiO3 Based Lead-Free Ferroelectric Thin Films on Si Substrate for Pyroelectric Infrared Sensors", Asia-Pacific Interdisciplinary Research Conference 2012, 15P-79, November 2012, Tahara, Japan.
  4. D. Akai, T. Yogi, I. Kanja, K. Sawada, N. Okada, K. Higuchi, and M. Ishida, "Miniature Ultrasound Acoustic Imaging Devices using 2-D pMUTs Array on Epitaxial PZT/SrRuO3/Pt/g-Al2O3/Si Structure", The 16th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers '11), pp. 910-913, June 2011, Beijing, China.
  5. D. Akai, N. kawazu, T. Sugai, K. Sawada, and M. Ishida, "Si Integrated Pyroelectric Sensor Array using Epitaxial γ-Al2O3/Si Subsrates and Epitaxial PZT Thin FIlms", SPIE 2009 Photonic Devices + Applications, 7419A-3, 2-6 Augast, 2009, San Diego CA USA.
  6. D. Akai, N. Kawazu, T. Sugai, K. Sawada, and M. Ishida, "Monolithically-Integrated Pyroelectric IR Sensor Array with Surface Micromachined Detectors on Epitaxial γ-Al2O3/Si Substrates", 4th Asia-Pasific Conference on Transducers and Micro-Nano Technology (APCOT2008), 1B2-2, 22-25 June, 2008, Tainan ROC (Taiwan).
  7. D. Akai, M. Yokawa, K. Hirabayashi, K. Sawada and M. Ishida, "Fabrication and Characterization of Epitaxial Pb(Zrx, Ti1-x)O3 and Pt Films on Si using Epitaxial γ-Al2O3 Buffer Layer for Sensor Devices", “Fabrication and Characterization of Epitaxial Pb(Zrx, Ti1-x)O3 and Pt Films on Si using Epitaxial γ-Al2O3 Buffer Layer for Sensor Devices”, Conference Proceedings of The International Conference on Electrical Engineering 2005 (ICEE2005), DM1-06, ICEE-F0096, July 10-14, Kunming, China, 2005.
  8. D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada, Y. Taniguchi, S. Murashige, N. Nakayama, T. Yamada, K. Murakami and M. Ishida, "Fast Response Time and High Sensitivity Pyroelectric Infrared Sensors using Epitaxial Pb(Zr,Ti)O3 Films on Epitaxial γ-Al2O3/Si Substrates", Technical Digest of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers ‘05), 2005, pp. 307-310, Seoul KOREA.
  9. D. Akai, M. Yokawa, K. Hirabayashi, K. Matsushita, K. Sawada and M. Ishida, "Fabrication of PZT/Pt/γ-Al2O3/Si Epitaxial Structure and its Ferroelectric Characteristics", 2004 MRS FALL MEETING ABSTRACTS, 2004, pp. 219-220, Boston USA. (POSTER)
  10. D. Akai, K. Sawada and M. Ishida, "Highly (100) Oriented PZT Films on Epitaxial Al2O3 (100) on Si(100)", Abstracts of the 13th Intl. Conf. on Crystal Growth, 2001, p. 331, Kyoto JAPAN. (POSTER with short presentation)

(共著)

  1. K. Oishi, D. Akai, and M. Ishida, "Circuits Integration on Crystalline Orientated Gamma-Al2O3/Si(001) Substrate and Its Characterization", The 7th Asia-Pacific Conference on Transducers and Micro/Nano Technologies (APCOT 2014), 3-3, June 2014, Daegu, Korea.
  2. K. Oishi, K. Oe, D. Akai, and M. Ishida, "Crystalline Orientated PZT Infrared Detectors on Gamma-Al2O3/Si Substrate with Infrared Absorber Sonsists of SiO2 and Sin Films", The 7th Asia-Pacific Conference on Transducers and Micro/Nano Technologies (APCOT 2014), P2-48, June 2014, Daegu, Korea.
  3. Daisuke Takashima, Katsuya Ozaki, Masato Nishimura, Nagaya Okada, Daisuke Akai, Makoto Ishida, "Vibration Analysis and Evaluation of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr, Ti)O3 Thin Film", The 7th Asia-Pacific Conference on Transducers and Micro/Nano Technologies (APCOT 2014), P2-47, June 2014, Daegu, Korea.
  4. M. A. Matin, K. Ozaki, Y. Numata, D. Akai, K. Sawada, M. Ishida, "Quantifying modal shapes in smart piezoelectric ultrasonic transducer array: Modeling and experiment", IEEE Sensors 2013, pp. 1-4, November 2013, Baltimore, MD, USA.
  5. K. Oishi, D. Akai, M. Ishida, "Integration of epitaxial PZT thin filminfrared detector array with JFET compatible CMOS process", Ext. Abstr. 2013 Int’l Conf. Solid State Devices and Materials (SSDM2013), pp. 328-329, September 2013, Kyoto, Japan.
  6. Koji Oishi, Kazuki Oe, Makoto Ishida, Daisuke Akai, "SiO2/SiN infrared absorbing films for uncooled pyroelectric sensor and its fabrication and evaluation", 2013 IEEE International Symposium on the Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), pp. 329-331, July 2013, Prague, Czechoslovakia.
  7. Koji Oishi, Kazuki Oe, Daisuke Akai, and Makoto Ishida, "Process Development for Monolithic Uncooled Pyroelectric Infrared Detector Array and its Thin Infrared Absorbing Films", Asia-Pacific Interdisciplinary Research Conference 2012, November 2012, Tahara, Japan.
  8. M. Ishida, K. Sawada, T. Kawano, D. Akai, I. Akita, "Bio-Medical Applications of smart sensing devices", Ext. Abstr. 2012 Int. Conf. Solid State Device and Materials(SSDM2012), pp.1069-1070, September 2012, Kyoto, Japan. (Invited)
  9. M.A. Matin, K. Ozaki, D. Akai, K. Sawada, M. Ishida, "Failsafe Wafer-Level Packaging of a Piezoelectric MEMS Actuator", Proc. IEEE Electronic Components and Technology Conf. (ECTC 2012), pp.356-361, May 2012, CA, USA. DOI: 10.1109/ECTC.2012.6248855
  10. Katsuya Ozaki, Keisuke Suzuki, Yasuyuki Numata, Nagaya Okada, Daisuke Akai, and Makoto Ishida, "High Density Piezoelectric Micro-machined Ultrasonic Transducers Array Using Epitaxial PZT Thin Film on γ-Al2O3/Si Substrate", 2012 MRS Spring Meeting & Exhibit, B9.4, April 2012, San Fransisco, CA, USA.
  11. Makoto Ishida, and Daisuke Akai, "Smart Micro Sensing Chips Using SOI Structures", 219th ECS Meeting, MA2011-01, 1443, May 2011, Montreal, Canada. (invited)
  12. A. Matin, K. Oishi, T. Sugai, D. Akai, K. Sawada, and M. Ishida, "Signficance of a priori prediction of encountered stresses during fabrication of smart monolithic sensor devices and packaging", International Conference on Electronics Packaging 2011, FB4-2, April 2011, Nara, Japan.
  13. Katsuya Ozaki, Daisuke Akai, Kazuaki Sawada, Makoto Ishida, "Fabrication and Evaluation of Piezoelectric Drive Type 2-Axis Tilt Control Device Using Epitaxial PZT Thin Film", Optical MEMS & Nanophotonics 2010, PO-11, August 2010, Sapporo, Japan.
  14. A. Matin, T. Sugai, N. Kawazu, D. Akai, K. Sawada, M Ishida, "Thermal modeling of novel monolithic pyroelectric infrared image sensors", 2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomina in Electronic Systems (Itherm), pp.1-7, January 2010, Las Vegas, NV, USA.
  15. A. Matin, D. Akai, K. Ozaki, N. Kawazu, M. Hanebuchi, K. Sawada, M Ishida, "Dynamic analysis of structure of a piezoelectric MEMS micro-mirror actuator: Effects of chip anisotropy and residual stress", 11th Electronics Packaging Technology Conference (EPTC '09), pp.416-421, December 2009, Singapore.
  16. A. Matin, D. Akai, N. Kawazu, K. Sawada, M. Ishida, and M. Hanebuchi, "Finite Element Modelling of PZT Actuated Micro-Mirror Scanner - Effect of Residual Stress", Modelling and Simulation (MS 2009), pp.670-087, July 2009.
  17. Ikuo Kanja, Mikito Otonari, Takahiro Yogi, Daisuke Akai, Kazuaki Sawada, Makoto Ishida, Nagaya Okada, Kazuki Higuchi, "HIGH SENSITIVITY ULTRASONIC TRANSDUCER ARRAY FOR 2-D HYDROP0HONE APPLICATION, USING AN EPITAXIAL PZT THIN FILM GROWN ON γ-Al2O3/Si", Thecnical Digest of The 15th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2009), pp. 1150-1153, 22-26 June, 2009, Denver CO USA.
  18. T. Sugai, K. Kikuchi, R. Yoshita, D. Akai, K. Sawada, M. Ishida, "PYROELECTRIC IR SENSOR ARRAY USING LEAD-FREE PYROELECTRIC NBT THIN FILM ON EPITAXIAL γ-Al2O3/Si(100) SUBSTRATE", Thecnical Digest of The 15th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2009), pp. 1971-1974, 22-26 June, 2009, Denver CO USA.
  19. A. Matin, D. Akai, M. Hanebuchi, T. Kawano, K. Sawada, M Ishida, "Thermo-mechanical and Piezoelectric Modeling of PZT Actuated μ-mirror Device", 10th Electronics Packaging Technology Conference (EPTC '08), pp.1288-1294, December 2008,Singapore.
  20. N. Okada, K. Higuchi, K. Kobayashi, M. Ito, M. Takabe, M. Otonari, I. Kanja, D. Akai, K. Sawada, M. Ishida, "Fabrication of MEMS diaphragm transducer array based on epitaxial PZT thin film for 2-D hydrophone application", 2008 IEEE Ultrasonic Symposium, pp.1781-1784, Nobember 2008, Beijing, China
  21. T. Yamazaki, D. Akai, K. Sawada, and M. Ishida, "8×8 PZT Pyroelectric Sensor Array Fabricated on Epitaxial Al2O3/Si Substrate", 4th Asia-Pasific Conference on Transducers and Micro-Nano Technology (APCOT2008), 2B1-1, 22-25 June, 2008, Tainan ROC (Taiwan).
  22. K. Hayashida, M. Ito, D. Akai, K. Sawada, and M. Ishida, "Heteroepitaxial Growth of γ-Al2O3 on Micro Patterned Si Substrates for a Local SOI Structure", 4th Asia-Pasific Conference on Transducers and Micro-Nano Technology (APCOT2008), 2D2-3, 22-25 June, 2008, Tainan ROC (Taiwan).
  23. K. Kikuchi, Y. Guo, D. Akai, K. Sawada, and M. Ishida, "(100)-Oriented (Na0.5Bi0.5)Tio3/LaNiO3 Thin Films Deposited on Epitaxial γ-Al2O3/Si(100) Substrates for Si Integrated Infrared Sensors", 4th Asia-Pasific Conference on Transducers and Micro-Nano Technology (APCOT2008), 2D1-3, 22-25 June, 2008, Tainan ROC (Taiwan).
  24. N. Kawazu, D. Akai, K. Minakawa, K. Sawada and M. Ishida, "Surface-Micromachined Piezoelectric Deformable Mirror using Epitaxial PZT Thin Films on Epitaxial γ-Al2O3/Si Substrates", 4th Asia-Pasific Conference on Transducers and Micro-Nano Technology (APCOT2008), 2S19, 22-25 June, 2008, Tainan ROC (Taiwan). (POSTER)
  25. N. Kawazu, K. Kikuchi, D. Akai, K. Sawada, and M. Ishida, "Integrated 32 x 32 Pyroelectric IR Sensor Array with nMOS/JFET Circuitry Using Highly (001) Oriented PZT Thin Films on Epitaxial gamma-Al2O3/Si Substrates", 17th International Symposium on the Applications of Ferroelectrics (IEEE ISAF 2008), 2008, FR015, New Mexico USA.
  26. N. Okada, K. Higuchi, K. Kobayashi, M. Ito, M. Takabe, M. Otonari, D. Akai, K. Sawada, M. Ishida,“Evaluation of 2D Hydrophone System Using Epitaxial PZT Thin Films Grown on Epitaxial γ-Al2O3/Si Substrate”, Presented at The 2007 IEEE International Ultrasonics Symposium, New York, 28-31 October, 2007.
  27. M. Ito, M. Takabe, M. Otonari, D. Akai, N. Okada, K. Sawada and M. Ishida, "Miniature High Sensitivity Ultrasonic Transducers using Epitaxial PZT Thin Films Grown on Epitaxial γ-Al2O3/Si Substrates for Smart Devices", Technical Digest of the 14th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers ‘07), 2007, pp. 1275-1278, Lyon FRANCE.
  28. Makoto Ishida, Daisuke Akai and Kazuaki Sawada,” Ferroelectric Thin Film Sensors on Epitaxial Pt/Al2O3/Si Substrates”, 6th Japan-Korea Conference on Ferroelectricity (JKC-FE06), 2006, I19B-2, Sendai JAPAN. (invited)
  29. M. Ito, D. Akai, Y. Harada, K. Sawada, and M. Ishida, " Epitaxial γ-Al2O3 Ultra Thin Films on Silicon for Heteroepitaxial Substrates", Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), 2005, pp. 272-273, Hyogo JAPAN. (POSTER).
  30. H. Hori, F. Kondo, D. Akai, K. Sawada, and M. Ishida, “Fabrication of the Si/Al2O3/SiO2/Si structure by using the O2 annealed Al2O3/Si structure”, The International Conference on Solid-State Devices and Materials (SSDM ’99), 1999, pp. 494-495, Tokyo JAPAN.

国内学会・研究会

  1. 赤井大輔, 西村将人, 岡田長也, 石田 誠, "圧電薄膜駆動型超音波振子アニュラーレイによる超音波ビーム形成", 第31回「センサ・マイクロマシンと応用システム」シンポジウム, 21pm2-B4, 2014年10月, くにびきメッセ(島根).
  2. 赤井大輔 , 與木隆弘 , 沼田泰幸 , 尾ア勝弥 , 岡田長也, 樋口一樹 , 石田誠, "エピタキシャル PZT/SrRuO3/Pt/γ-Al2O3/Si 基板上への 2D 超音波センサアレイの製作とイメージング", 第28回「センサ・マイクロマシンと応用システム」シンポジウム, pp.595-598, 2011年9月,タワーホール船堀(東京).
  3. 赤井大輔、澤田和明、石田誠,"エピタキシャルγ-Al2O3/Si基板を用いたSi集積化強誘電体薄膜デバイス",第1回集積化MEMS技術研究ワークショップ,東京工業大学,2009年7月.
  4. 赤井大輔,菅井隆博,澤田和明,石田 誠,"シリコン集積化焦電型赤外線センサアレイの評価",2009年(平成21年)春期 第56回応用物理学関係連合講演会,講演予稿集第2分冊,p. 578,筑波大学.
  5. 赤井大輔,河津直樹,菅井隆博,澤田和明,石田 誠,"シリコン基板上のエピタキシャル強誘電体薄膜と焦電型赤外線センサアレイへの応用",第6回赤外放射の応用関連学会等年会, 講演番号6,東京都千代田区,2009年2月6日.
  6. D. Akai, K. Hirabayashi, M. Yokawa, K. Hirabayashi, K. Sawada, Y. Taniguchi, S. Murashige, N. Nakayama, T. Yamada, K. Murakami, and M. Ishida, “Pyoelectric Infrared Sensors using Epitaxial Pb(Zr,Ti)O2 Films on Epitaxial γ-Al2O3/Si Substrates”, ITE Technical Report, Vol. 29, No. 67 (2005) 27-30.
  7. D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada, Y. Taniguchi, S. Murashige, N. Nakayama, T. Yamada, K. Murakami and M. Ishida, "Fabrication and Characterization of Pyroelectric Infrared Sensors using Epitaxial γ-Al2O3/Si Substrates", Proceedings of 22nd Sensor Symposium, (2005) 175-178..
  8. D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada, Y. Taniguchi, S. Murashige, N. Nakayama, T. Yamada, K. Murakami and M. Ishida, "Fabrication of Pyroelectric Infrared Sensors using Epitaxial γ-Al2O3/Si Substrates with Epitaxial PZT Films", Extended Abstracts (The 66th Autumn meeting, 2005); The Japan Society of Applied Physics, No. 1 (2005) 441.
  9. D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada and M. Ishida, “Ferroelectrics Properties of Epitaxial Pb(Zrx, Ti1-x)O3 Thin Films on Epitaxial Pt/γ-Al2O3/Si Substrates”, Proceedings of the 21st Sensor Symposium (2004) 465-468.
  10. D. Akai, K. Matsushita, M. Yokawa, K. Sawada and M. Ishida, "Preparation and Chatacterization of PbTiO3 and (Pb,La)TiO3 Thin Films on Pt/γ-Al2O3/Si Substrates", Extended Abstracts (The 51st Spring meeting, 2004); The Japan Society of Applied Physics, No. 2 (2004) 601.
  11. D. Akai, M. Yokawa, K. Hirabayashi, K. Sawada and M. Ishida, "Ferroelectric Thin FIlms on Epitaxial γ-Al2O3/Si substrates", Technical Report of IEICE, Vol. 103, No. 51 (2003) 61-65
  12. D. Akai, K. Sawada and M. Ishida, "Preparation and Characterization of (Bi,La)4Ti3O12 Thin Films on Epitaxial γ-Al2O3/Si Substrates", Extended Abstracts (The 51st Spring meeting, 2004); The Japan Society of Applied Physics, No. 2 (2004) 619.
  13. D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada and M. Ishida, "Epitaxial Pt(001) Thin FIlms on γ-Al2O3(001)/Si(001) Substrates", Extended Abstracts (The 50th Spring meeting, 2003); The Japan Society of Applied Physics, No. 2 (2003) 580.
  14. D. Akai, K. Sawada and M. Ishida, "Preparation and Characterization of SrBi2Ta2O9 thin film on γ-Al2O3(100)/Si(100) substrate", Extended Abstracts (The 63rd Autumn meeting, 2002); The Japan Society of Applied Physics, No. 2 (2002) 580.
  15. D. Akai, M. Yokawa, K. Sawada and M. Ishida, "Diffusion Barrier Effects Using an Epitaxial Al2O3(100) Insulator", Extended Abstracts (The 49th Spring meeting, 2002); The Japan Society of Applied Physics, No. 2 (2002).
  16. D. Akai, Camargo,E. Gomes, K. S. Kim, Y. T. Kim, T. Yazawa, H. Funabashi, K. Sawada and M. Ishida, "Characteristics of SBT Thin Films on Epitaxial Al2O3(100)/Si(100) Substrates", Extended Abstracts (The 62nd Autumn meeting, 2001); The Japan Society of Applied Physics, No. 2 (2001).
  17. D. Akai, K. Sawada and M. Ishida, "Orientaiton of Pb(Zr,Ti)O3 thin films with the epitaxial Al2O3 buffer layer on Si(100) substrate", Extended Abstracts (The 48th Spring meeting, 2001); The Japan Society of Applied Physics, No. 2 (2001) 575.
  18. D. Akai, B. K. Roh, K. Sawada and M. Ishida, "Fabrication of PZT thin film on epitaxial-Al2O3(100)/Si(100)", Extended Abstracts (The 61st Autumn meeting, 2000); The Japan Society of Applied Physics, No. 2 (2000) 432.

(共著)

  1. 大石浩史, 赤井大輔, 石田 誠, "Si(100)基板上への結晶配向γ-Al2O3薄膜とCMOS回路のインテグレーション及びその評価", 第31回「センサ・マイクロマシンと応用システム」シンポジウム, 22am2-A3, 2014年10月, くにびきメッセ(島根).
  2. 米丸翔太, 大石浩史, 赤井大輔, 石田 誠, "焦電型赤外線センサの感度向上に向けた配線材料薄膜化", 第75回応用物理学会秋季学術講演会 講演予稿集, p. 13-094, 2014年9月, 北海道大学(札幌).
  3. 大江一樹, 米丸翔太, 大石浩史, 赤井大輔, 石田 誠, "赤外線吸収膜としてSiONを用いた焦電型赤外線センサの作製と評価", 第61回応用物理学会春季学術講演会 講演予稿集, p. 13-095, 2014年3月, 青山学院大学(神奈川).
  4. 大石浩史, 赤井大輔, 石田 誠, "結晶配向γ-Al2O3/Si(001)基板への回路インテグレーションと回路特性評価", 第61回応用物理学会春季学術講演会 講演予稿集, p. 13-094, 2014年3月, 青山学院大学(神奈川).
  5. 高島大輔, 尾崎勝弥, 西村将人, 岡田長也, 赤井大輔, 石田 誠, "振動解析に基づく圧電型超音波トランスデューサの構造改善と受信感度評価", 第30回「センサ・マイクロマシンと応用システム」シンポジウム, 5PM3-PSS-59, 2013年11月, 仙台国際センター(宮城).
  6. 大石浩史, 石田 誠, 赤井大輔, "赤外線イメージセンサに向けたエピタキシャルPZT薄膜センサとJFET混載MOS一体化プロセスの開発", 第30回「センサ・マイクロマシンと応用システム」シンポジウム, 5PM1-B-2, 2013年11月, 仙台国際センター(宮城).
  7. 西村将人, 尾崎勝弥, 赤井大輔, 石田 誠, 岡田長也, "γ-Al2O3/Si基板上のPZT薄膜を用いた超音波トランスデューサの受信感度測定と音圧マッピング", 電子情報通信学会電子デバイス研究会, 2013年5月, 静岡大学(静岡).
  8. 西村将人, 鈴木啓佑, 尾崎勝弥, 岡田長也, 赤井大輔, 石田 誠, "PZT薄膜を用いた超音波トランスデューサでの二次元音圧マッピングと受信感度測定", 第29回「センサ・マイクロマシンと応用システム」シンポジウム, pp. 633-636, 2012年10月, 西日本総合展示場(福岡).
  9. 鈴木啓佑, 尾崎勝弥, 赤井大輔, 石田誠, "γ-Al2O3/Si基板上のエピタキシャルPZT薄膜を用いた超音波トランスデューサの作製と評価", 平成24年度電気関係学会東海支部連合大会 講演論文集, M2-7, 2012年9月, 豊橋技術科学大学(愛知).
  10. 大石浩史, 大江一樹, 赤井大輔, 石田 誠, "焦電型赤外線イメージセンサ応用へ向けた薄膜赤外線吸収膜の作製", 第73回応用物理学会学術講演会 講演予稿集, p. 22-020, 2012年9月, 愛媛大学(愛媛).
  11. 沼田泰幸,鈴木啓佑,尾崎勝弥,岡田長也,赤井大輔,石田 誠, "Si基板上PZT薄膜を用いた超音波トランスデューサアレイの送信特性", 第59回応用物理学関係連合講演会, 2012年3月, 早稲田大学(東京).
  12. 大石浩史,M. A, Matin,勝田明寛,赤井大輔,石田 誠, "Si 基板上のエピタキシャルPZT/Pt/γ-Al2O3 積層膜の応力解析", 第72回応用物理学会学術講演会, 2011年9月, 山形大学(山形).
  13. 石田 誠, 澤田和明, 河野剛士, 赤井大輔, "集積化デバイスの切り拓くライフイノベーション", 第58回応用物理学関係連合講演会 講演予稿集, p. 12, 2011年3月, 神奈川工科大学(神奈川).
  14. 與木隆弘,岡田長也,樋口一樹,赤井大輔,石田 誠, "エピタキシャルγ-Al2O3/Si基板上のPZT薄膜を用いた超音波センサアレイの製作と評価", 第58回応用物理学関係連合講演会, 26a-BE-8, 2011年3月, 神奈川工科大学(神奈川).
  15. 與木隆弘,神社生朗,赤井大輔,澤田和明,石田 誠, "SRO/γ-Al2O3/Si基板上のエピタキシャルPZT薄膜を用いた超音波トランスデューサアレイの製作と評価", 第27回「センサ・マイクロマシンと応用システム」シンポジウム, pp.313-316, 2010年10月, くにびきメッセ(島根).
  16. 吉田遼人,大石浩史,赤井大輔,石田 誠, "選択成長により形成したγ-Al2O3/Si基板上のPZT薄膜", 第71回応用物理学会学術講演会, 06-048, 2010年9月, 長崎大学(長崎).
  17. 大石浩史,小澤 学,赤井大輔,石田 誠, "強誘電体薄膜センサへの応用に向けたγ-Al2O3(001)選択エピタキシャル成長", 第57回応用物理学関係連合講演会, 06-057, 2010年3月, 東海大学(神奈川).
  18. 菅井隆博,菊池賢朗,吉田遼人,赤井大輔,澤田和明,石田 誠, "Smart Pyroelectric IR Sensor Array on Epitaxial γ-Al2O3/Si(100) Substrates using Lead-free Pyroelectric Materials", 第26回「センサ・マイクロマシンと応用システム」シンポジウム, pp. 627-630, 2009年10月, タワーホール船堀(東京).
  19. 神社生朗,大隣樹人,與木隆弘,赤井大輔,澤田和明,石田 誠,岡田長也,樋口一樹, "Fabrication of Piezoelectric micromachined ultrasonic transducers array using an epitaxial PZT thin films on γ-Al2O3/Si", 集積化MEMSシンポジウム2009, pp. 33-36, 2009年10月, タワーホール船堀(東京).
  20. 菊池賢朗,赤井大輔,吉田遼人,菅井隆博,澤田和明,石田 誠,"(Na,Bi)TiO3薄膜のSi集積化センサへの応用",2009年(平成21年)春期 第56回応用物理学関係連合講演会,講演予稿集第2分冊,p. 579,筑波大学.
  21. 神社生朗,大隣樹人,赤井大輔,澤田和明,石田 誠,"γ-Al2O3/Si基板上への圧電型超音波トランスデューサアレイの製作",2009年(平成21年)春期 第56回応用物理学関係連合講演会,講演予稿集第2分冊,p. 579,筑波大学.
  22. 神社生朗,伊藤幹記,赤井大輔,澤田和明,石田 誠,”エピタキシャルPZT薄膜を用いた圧電型超音波トランスデューサアレイの製作”,2008年電気学会センサ・マイクロマシン部門総合研究会,電気学会研究会資料,PHS-08-8(p.5-8).
  23. 林田圭司,伊藤幹記,赤井大輔,澤田和明,石田 誠, “高分解能等価型電子顕微鏡によるγ-Al2O3/Si(001)構造の評価”, 2008年(平成20年)春季 第55回応用物理学関係連合講演会, 講演予稿集第2分冊, p. 620, 日本大学.
  24. 菅井隆博,河津直樹,赤井大輔,澤田和明,石田 誠, “エピタキシャルγ-Al2O3/Si基板により形成されるPZT(001)薄膜を用いた32×32焦電型赤外線センサアレイと読み出し回路の集積化”, 2008年(平成20年)春季 第55回応用物理学関係連合講演会, 講演予稿集第2分冊, p. 568, 日本大学.
  25. 伊藤幹記, 大隣樹人, 赤井大輔, 澤田和明, 石田誠, 岡田長也, 樋口和樹, “エピタキシャルPZT 薄膜を用いた圧電型MEMS トランスデューサアレイの作製”, 第28回超音波エレクトロニクスの基礎と応用に関するシンポジウム(USE2007), 1-05P-35 (2007).
  26. 菊池賢朗,郭 益平,赤井大輔,澤田和明,石田 誠: “エピタキシャルAl2O3/Si 基板上への高配向Pb(Zrx,Ti1-x)O3/LaNiO3薄膜の形成と評価”, 2007年(平成19年)春季 第54回応用物理学関係連合講演会, 講演予稿集第2分冊 p. 627, 青山学院大学.
  27. 伊藤幹記,大隣樹人,赤井大輔,澤田和明,石田 誠: “γ-Al2O3/Si 基板上へのSrRuO3エピタキシャル成長”, 2007年(平成19年)春季 第54回応用物理学関係連合講演会, 講演予稿集第2分冊 p. 630, 青山学院大学.
  28. 大場康裕,伊藤幹記,赤井大輔,澤田和明,石田 誠: ”エピタキシャルPt/γ-Al2O3/Si基板上のPb(Zrx,Ti1-x)O3薄膜の共振周波数特性”, 2005年(平成17年)春季 第52回応用物理学関係連合講演会 31a-P4-18, No.2, pp.669 埼玉大学 2005年3月29日〜4月1日
  29. 伊藤幹記,大場康裕,赤井大輔,澤田和明,石田 誠: ”γ-Al2O3/Si基板上にエピタキシャル成長したPt下部電極の表面粗さ低減”, 2005年(平成17年)春季 第52回応用物理学関係連合講演会 31a-P4-17, No.2, pp.668 埼玉大学 2005年3月29日〜4月1日
  30. 大場康裕,宮薗慎一,外間省吾,赤井大輔,澤田和明,石田 誠: ”エピタキシャルAl2O3膜を用いたSi/Al2O3/SiO2/Si構造SOI基板のnMOSFET特性”, 2004年(平成16年)秋季 第65回応用物理学会学術講演会 3p-P11-11, No.2, pp.748 東北学院大学 2004年9月1日〜4日(発表:9/3)
  31. M. Yokawa, D. Akai, K. Sawada and M. Ishida, "Fabrication of Pb(Zrx/Ti1-x)O3 thin films on epitaxial Pt/Al2O3/Si", Extended Abstracts (The 51st Spring meeting, 2004); The Japan Society of Applied Physics, No. 2 (2004) 600.
  32. E. G. Camargo, S. Sotoma, T. Yazawa, D. Akai, S. Miyazono, K. Sawada and M. Ishida, "Improvement of epitaxial γ-Al2O3 films on Si using a MBE-CVD hybrid growth method", Extended Abstracts (The 50th Spring meeting, 2003); The Japan Society of Applied Physics, No. 2 (2003) 943.

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